METHOD OF INVARIANTS APPLIED TO INDIRECT GAP ABSORPTION

[1] BIR GL, 1974, SYMMETRY STRAIN INDU, P239

[2] INDIRECT EXCITON FINE-STRUCTURE IN GAP AND THE EFFECT OF UNIAXIAL STRESS [J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5590 - 5605

[3] Koster G. F., 1963, PROPERTIES 32 POINT

[4] LANDOLTBORNSTEI, 1982, SEMICONDUCTORS

[5] THEORY OF INDIRECT EXCITONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4883 - 4895

[6] ANALYSIS OF DERIVATIVE SPECTRUM OF INDIRECT EXCITON ABSORPTION IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1973, 12 (11) : 1137 - 1140

[7] Pikus G. E., 1977, Soviet Physics - Solid State, V19, P965

[8] TEMPERATURE-DEPENDENCE OF RELATIVE INTEGRATED-INTENSITIES OF SYMMETRY-ALLOWED PHONON-ASSISTED EXCITON EMISSION IN SI AND GE [J]. PHYSICAL REVIEW B, 1976, 14 (06): : 2448 - 2455

[9] QUANTUM RESONANCES IN THE VALENCE BANDS OF ZINCBLENDE SEMICONDUCTORS .1. THEORETICAL ASPECTS [J]. PHYSICAL REVIEW B, 1979, 20 (02): : 686 - 700

[1] BIR GL, 1974, SYMMETRY STRAIN INDU, P239

[2] INDIRECT EXCITON FINE-STRUCTURE IN GAP AND THE EFFECT OF UNIAXIAL STRESS [J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5590 - 5605

[3] Koster G. F., 1963, PROPERTIES 32 POINT

[4] LANDOLTBORNSTEI, 1982, SEMICONDUCTORS

[5] THEORY OF INDIRECT EXCITONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4883 - 4895

[6] ANALYSIS OF DERIVATIVE SPECTRUM OF INDIRECT EXCITON ABSORPTION IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1973, 12 (11) : 1137 - 1140

[7] Pikus G. E., 1977, Soviet Physics - Solid State, V19, P965

[8] TEMPERATURE-DEPENDENCE OF RELATIVE INTEGRATED-INTENSITIES OF SYMMETRY-ALLOWED PHONON-ASSISTED EXCITON EMISSION IN SI AND GE [J]. PHYSICAL REVIEW B, 1976, 14 (06): : 2448 - 2455

[9] QUANTUM RESONANCES IN THE VALENCE BANDS OF ZINCBLENDE SEMICONDUCTORS .1. THEORETICAL ASPECTS [J]. PHYSICAL REVIEW B, 1979, 20 (02): : 686 - 700