A NEW MECHANISM OF FAILURE IN SILICON P+/N JUNCTION INDUCED BY DIFFUSION BARRIER METALS

被引：26

作者：

IGARASHI, Y

YAMAJI, T

NISHIKAWA, S

机构：

[1] Semiconductor Technology Laboratory, OKI Electric Industry Co, Hachiojishi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

TIN; ZRN; BARRIER METAL; CONTACT HOLE; STRESS; JUNCTION LEAKAGE; DISLOCATION FORMATION; LATTICE CONTRACTION; STRESS SIMULATION;

D O I：

10.1143/JJAP.29.L2337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of failure of p+/n and n+/p junctions under Al- Si/TiN/Ti and Al-Si/ZrN/Zr systems at contact holes has been investigated. When the total force of the barrier metal in the metallization system, which is defined as the product of the film stress and the film thickness, is larger than 3 X 10(5) dyn/cm, the junction leakage current increases on p+/n diodes, but not on n+/p diodes after annealing at 500-degrees-C. This increase is caused by the formation of dislocation loops in p+-Si. The formation depends on the annealing temperature, the total force of barrier metal and the B concentration.

引用

页码：L2337 / L2340

页数：4

共 8 条

[1] DEFECTS INTRODUCED IN SILICON-WAFERS DURING RAPID ISOTHERMAL ANNEALING - THERMOELASTIC AND THERMOPLASTIC EFFECTS [J].