PERFORMANCE AND FAILURE MECHANISMS OF TIN DIFFUSION BARRIER LAYERS IN SUB-MICRON DEVICES

被引：50

作者：

KOHLHASE, A

MANDL, M

PAMLER, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2464 / 2469

页数：6

相关论文

共 31 条

[1] ANALYTICAL ELECTRON-MICROSCOPY OF AL/TIN CONTACTS ON SILICON FOR APPLICATIONS TO VERY LARGE-SCALE INTEGRATED DEVICES
ARMIGLIATO, A
VALDRE, G
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 390 - 396
[2] CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE
BUTZ, R
RUBLOFF, GW
TAN, TY
HO, PS
[J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5421 - 5429
[3] ELECTROCHEMICALLY MEASURED POROSITY OF MAGNETRON SPUTTERED TIN FILMS DEPOSITED AT VARIOUS SUBSTRATE ORIENTATIONS
FRELLER, H
LORENZ, HP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06): : 2691 - 2694
[4] Iwabuchi S., 1986, 1986 Symposium on VLSI Technology. Digest of Technical Papers, P55
[5] INVESTIGATION OF REACTIVELY SPUTTERED TIN FILMS FOR DIFFUSION-BARRIERS
KANAMORI, S
[J]. THIN SOLID FILMS, 1986, 136 (02) : 195 - 214
[6] GROWTH AND PROPERTIES OF TIN AND TIOXNY DIFFUSION-BARRIERS IN SILICON ON SAPPHIRE INTEGRATED-CIRCUITS
KUMAR, N
FISSEL, MG
POURREZAEI, K
LEE, B
DOUGLAS, EC
[J]. THIN SOLID FILMS, 1987, 153 : 287 - 301
[7] A HIGHLY RELIABLE INTERCONNECTION FOR A BF2+-IMPLANTED JUNCTION UTILIZING A TIN/TI BARRIER METAL SYSTEM
MAEDA, T
NAKAYAMA, T
SHIMA, S
MATSUNAGA, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 599 - 606
[8] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON
MURARKA, SP
FRASER, DB
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349
[9] DIFFUSION BARRIERS IN THIN-FILMS
NICOLET, MA
[J]. THIN SOLID FILMS, 1978, 52 (03) : 415 - 443
[10] LIMITATION OF TI/TIN DIFFUSION BARRIER LAYERS IN SILICON TECHNOLOGY
NORSTROM, H
NYGREN, S
WIKLUND, P
OSTLING, M
BUCHTA, R
PETERSSON, CS
[J]. VACUUM, 1985, 35 (12) : 547 - 553

← 1 2 3 4 →