A HIGHLY RELIABLE INTERCONNECTION FOR A BF2+-IMPLANTED JUNCTION UTILIZING A TIN/TI BARRIER METAL SYSTEM

被引：21

作者：

MAEDA, T ^{[1
]}

NAKAYAMA, T ^{[1
]}

SHIMA, S ^{[1
]}

MATSUNAGA, J ^{[1
]}

机构：

[1] TOSHIBA CORP,VLSI RES CTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 03期

关键词：

D O I：

10.1109/T-ED.1987.22969

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：599 / 606

页数：8

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