ENERGY RELAXATION EFFECT OF HOT-ELECTRONS IN GAAS

被引：36

作者：

ASHIDA, K ^{[1
]}

INOUE, M ^{[1
]}

SHIRAFUJI, J ^{[1
]}

INUISHI, Y ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1974年 / 37卷 / 02期

关键词：

D O I：

10.1143/JPSJ.37.408

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：408 / 414

页数：7

相关论文

共 14 条

[11] TIME RESPONSE OF HIGH-FIELD ELECTRON DISTRIBUTION FUNCTION IN GAAS
REES, HD
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) : 537 - &
[12] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD
RUCH, JG
FAWCETT, W
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3843 - &
[13] ENERGY RELAXATION TIME OF HOT ELECTRONS IN GAAS
VLAARDINGERBROEK, MT
KUYPERS, W
ACKET, GA
[J]. PHYSICS LETTERS A, 1968, A 28 (02) : 155 - +
[14] HIGH-FIELD CONDUCTIVITY IN GERMANIUM AND SILICON AT MICROWAVE FREQUENCIES
ZUCKER, J
FOWLER, VJ
CONWELL, EM
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) : 2606 - &