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THERMAL-OXIDATION OF UNDOPED LPCVD POLYCRYSTALLINE-SILICON FILMS
被引:8
作者
:
LU, CY
论文数:
0
引用数:
0
h-index:
0
LU, CY
TSAI, NS
论文数:
0
引用数:
0
h-index:
0
TSAI, NS
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1986年
/ 133卷
/ 02期
关键词
:
D O I
:
10.1149/1.2108596
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:446 / 447
页数:2
相关论文
共 9 条
[1]
BALDI L, 1980, ELECTROCHEMICAL SOC, V80, P441
[2]
LOW-TEMPERATURE DIFFERENTIAL OXIDATION FOR DOUBLE POLYSILICON VLSI DEVICES
BARNES, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Camera and Instrument Corporation, Research and Development Laboratory, Palo Alto
BARNES, JJ
DEBLASI, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Camera and Instrument Corporation, Research and Development Laboratory, Palo Alto
DEBLASI, JM
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Camera and Instrument Corporation, Research and Development Laboratory, Palo Alto
DEAL, BE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(10)
: 1779
-
1785
[3]
GROWTH AND PHYSICAL-PROPERTIES OF LPCVD POLYCRYSTALLINE SILICON FILMS
HARBEKE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
HARBEKE, G
KRAUSBAUER, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
KRAUSBAUER, L
STEIGMEIER, EF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
STEIGMEIER, EF
WIDMER, AE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
WIDMER, AE
KAPPERT, HF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
KAPPERT, HF
NEUGEBAUER, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
NEUGEBAUER, G
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(03)
: 675
-
682
[4]
OXIDATION OF PHOSPHORUS-DOPED LOW-PRESSURE AND ATMOSPHERIC-PRESSURE CVD POLYCRYSTALLINE-SILICON FILMS
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett-Packard Laboratories, Palo Alto
KAMINS, TI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(05)
: 838
-
844
[5]
STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
KAMINS, TI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(03)
: 686
-
690
[6]
THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
KAMINS, TI
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
MACKENNA, EL
[J].
METALLURGICAL TRANSACTIONS,
1971,
2
(08):
: 2292
-
&
[7]
OXIDATION OF ARSENIC IMPLANTED POLYCRYSTALLINE SILICON
KINSBRON, E
论文数:
0
引用数:
0
h-index:
0
KINSBRON, E
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
MURARKA, SP
SHENG, TT
论文数:
0
引用数:
0
h-index:
0
SHENG, TT
LYNCH, WT
论文数:
0
引用数:
0
h-index:
0
LYNCH, WT
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(07)
: 1555
-
1560
[8]
THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED THIN-FILMS OF POLYCRYSTALLINE SILICON
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
SINGH, H
论文数:
0
引用数:
0
h-index:
0
SINGH, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(10)
: 2321
-
2326
[9]
THERMAL-OXIDATION OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON IN WET OXYGEN
SUNAMI, H
论文数:
0
引用数:
0
h-index:
0
SUNAMI, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(06)
: 892
-
897
←
1
→
共 9 条
[1]
BALDI L, 1980, ELECTROCHEMICAL SOC, V80, P441
[2]
LOW-TEMPERATURE DIFFERENTIAL OXIDATION FOR DOUBLE POLYSILICON VLSI DEVICES
BARNES, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Camera and Instrument Corporation, Research and Development Laboratory, Palo Alto
BARNES, JJ
DEBLASI, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Camera and Instrument Corporation, Research and Development Laboratory, Palo Alto
DEBLASI, JM
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Camera and Instrument Corporation, Research and Development Laboratory, Palo Alto
DEAL, BE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(10)
: 1779
-
1785
[3]
GROWTH AND PHYSICAL-PROPERTIES OF LPCVD POLYCRYSTALLINE SILICON FILMS
HARBEKE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
HARBEKE, G
KRAUSBAUER, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
KRAUSBAUER, L
STEIGMEIER, EF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
STEIGMEIER, EF
WIDMER, AE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
WIDMER, AE
KAPPERT, HF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
KAPPERT, HF
NEUGEBAUER, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
NEUGEBAUER, G
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(03)
: 675
-
682
[4]
OXIDATION OF PHOSPHORUS-DOPED LOW-PRESSURE AND ATMOSPHERIC-PRESSURE CVD POLYCRYSTALLINE-SILICON FILMS
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett-Packard Laboratories, Palo Alto
KAMINS, TI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(05)
: 838
-
844
[5]
STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
KAMINS, TI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(03)
: 686
-
690
[6]
THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
KAMINS, TI
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
MACKENNA, EL
[J].
METALLURGICAL TRANSACTIONS,
1971,
2
(08):
: 2292
-
&
[7]
OXIDATION OF ARSENIC IMPLANTED POLYCRYSTALLINE SILICON
KINSBRON, E
论文数:
0
引用数:
0
h-index:
0
KINSBRON, E
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
MURARKA, SP
SHENG, TT
论文数:
0
引用数:
0
h-index:
0
SHENG, TT
LYNCH, WT
论文数:
0
引用数:
0
h-index:
0
LYNCH, WT
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(07)
: 1555
-
1560
[8]
THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED THIN-FILMS OF POLYCRYSTALLINE SILICON
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
SINGH, H
论文数:
0
引用数:
0
h-index:
0
SINGH, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(10)
: 2321
-
2326
[9]
THERMAL-OXIDATION OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON IN WET OXYGEN
SUNAMI, H
论文数:
0
引用数:
0
h-index:
0
SUNAMI, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(06)
: 892
-
897
←
1
→