IMPROVEMENT OF ELECTRON-DIFFUSION LENGTHS IN POLYCRYSTALLINE SILICON-WAFERS BY ALUMINUM

被引:11
作者
MARTINUZZI, S
POITEVIN, H
ZEHAF, M
ZURLETTO, C
机构
来源
REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 07期
关键词
D O I
10.1051/rphysap:01987002207064500
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:645 / 648
页数:4
相关论文
共 16 条
[1]   LATERAL REACTION OF POLYCRYSTALLINE SILICON FILM WITH OVERLAPPING ALUMINUM FILM [J].
ARAI, H ;
KOHDA, S ;
KITANO, Y .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1143-1146
[2]   MENDING OF RECOMBINANT FAULTS BY HYDROGEN IN LAYERS OF RAD POLYCRYSTALLINE SILICON [J].
AUCOUTURIER, M ;
RALLON, O ;
MAUTREF, M ;
BELOUET, C .
JOURNAL DE PHYSIQUE, 1982, 43 (NC1) :117-123
[3]  
BATTISTELLA F, 1986, MRS C P, V59, P347
[4]   PRECIPITATION OF OXYGEN AT 485-DEGREES-C - DIRECT EVIDENCE FOR ACCELERATED DIFFUSION OF OXYGEN IN SILICON [J].
BERGHOLZ, W ;
HUTCHISON, JL ;
PIROUZ, P .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) :3419-3424
[5]  
Kazmerski L., 1985, Sixth E.C. Photovoltaic Solar Energy Conference, P83
[6]  
KEAVNEY C, 1986, IN PRESS 169TH EL SO
[7]   DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].
MCCALDIN, JO ;
SANKUR, H .
APPLIED PHYSICS LETTERS, 1971, 19 (12) :524-&
[8]   INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J].
NAKAMURA, K ;
NICOLET, MA ;
MAYER, JW ;
BLATTNER, RJ ;
EVANS, CA .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) :4678-4684
[9]  
OATES AS, 1984, J ELECTRON MATER A, V14, P709
[10]   INVESTIGATION OF POLYCRYSTALLINE SILICON BACK SURFACE FIELD SOLAR-CELLS [J].
ORR, WA ;
ARIENZO, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) :1151-1155