ELECTROREFLECTANCE AND PHOTOREFLECTANCE OF GAINP

被引：39

作者：

KURTZ, SR

OLSON, JM

KIBBLER, A

机构：

[1] Solar Energy Research Inst, United States

来源：

SOLAR CELLS | 1988年 / 24卷 / 3-4期

关键词：

Semiconducting Gallium Arsenide - Solar Cells - Materials;

D O I：

10.1016/0379-6787(88)90082-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Electrolyte electroreflectance and photoreflectance spectra of GaInP films lattice-matched to GaAs are reported. The band structure is shown to vary even at a fixed composition because of ordering of the alloy GaInP2. The variation of E0 and E1 is reported as a function of the deposition temperature.

引用

页码：307 / 312

页数：6

共 15 条

[11] OLSON JM, 1987, 19TH P IEEE PHOT SPE, P285
[12] OLSON JM, 1985, 18 IEEE PHOT SPEC C, P552
[13] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES
PEARSALL, TP
BEVK, J
FELDMAN, LC
BONAR, JM
MANNAERTS, JP
OURMAZD, A
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (07) : 729 - 732
[14] INDIRECT, QUASI-DIRECT, AND DIRECT OPTICAL-TRANSITIONS IN THE PSEUDOMORPHIC (4X4)-MONOLAYER SI-GE STRAINED-LAYER SUPERLATTICE ON SI(001)
PEOPLE, R
JACKSON, SA
[J]. PHYSICAL REVIEW B, 1987, 36 (02): : 1310 - 1313
[15] [No title captured]

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