FULLY PASSIVATED AR COATED INP/INGAAS MSM PHOTODETECTORS

被引：2

作者：

KOLLAKOWSKI, S

SCHADE, U

BOTTCHER, EH

BIMBERG, D

机构：

[1] Institut für Festkörperphysik I der Technischen Universität Barlin, Berlin

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 11期

关键词：

D O I：

10.1109/68.334827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a technique for antireflection (AR) coating and surface passivation of InP:Fe/InGaAs:Fe metal-semiconductor-metal (MSM) photodetectors using nonreactive radio frequency (RF) magnetron sputtered silicon nitride. Excessive leakage currents and photocurrent gain, major performance-limiting factors of unpassivated detectors, were strongly suppressed in this way. The influence of various chemical pretreatments including sulfide passivation applied to the InP:Fe surface prior to the low-temperature silicon nitride deposition in optimizing the passivating process is investigated.

引用

页码：1324 / 1326

页数：3

共 12 条

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