COMPLEX IMPEDANCE SPECTROSCOPY FOR METAL-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR SURFACE CHARACTERIZATION

A new metal-semiconductor field-effect-transistor surface characterization technique is presented. The complex impedance (magnitude and phase) between the source and drain contacts is measured as a function of frequency and temperature. It is shown that the phase data exhibit peaks in the frequency spectrum that correspond to characteristic emission rates for surface-state traps. Measurements at different temperatures provide the energetic position and capture cross section of dominant traps. The technique provides a relatively rapid surface characterization tool in comparison to deep-level transient spectroscopy. (C) 1995 American Institute of Physics.