EXPERIMENTAL-DETERMINATION OF THE MOS-TRANSISTOR PARAMETERS

被引：10

作者：

ROSSEL, P

TRANDUC, H

SANCHEZ, JL

BELLAOUAR, A

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1983年 / 18卷 / 08期

关键词：

D O I：

10.1051/rphysap:01983001808048700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：487 / 493

页数：7

共 11 条

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[2]

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[4]

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[5] A NEW METHOD TO ELECTRICALLY DETERMINE EFFECTIVE MOSFET CHANNEL WIDTH [J].

MA, YR ;

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[6] AN IMPROVED METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J].

PENG, KL ;

AFROMOWITZ, MA .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :360-362

[7] ACCURATE 2 SECTIONS MODEL FOR MOS-TRANSISTOR IN SATURATION [J].

ROSSEL, P ;

MARTINOT, H ;

VASSILIEFF, G .

SOLID-STATE ELECTRONICS, 1976, 19 (01) :51-56

[8] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS [J].

SUCIU, PI ;

JOHNSTON, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) :1846-1848

[9] NEW METHOD TO DETERMINE EFFECTIVE MOSFET CHANNEL LENGTH [J].

TERADA, K ;

MUTA, H .

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[10]

TRANDUC H, 1980, LAAS NT80I21 NOT TEC

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