ZNSE-BASED LASER-DIODES AND P-TYPE DOPING OF ZNSE

被引：32

作者：

OHKAWA, K

TSUJIMURA, A

HAYASHI, S

YOSHII, S

MITSUYU, T

机构：

[1] Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90224-T

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N metastables in the A3SIGMA(u)+ state. The free-hole concentration of N-doped ZnSe is of the order of 10(17) cm-3 at room temperature. Laser diode action has been observed from ZnCdSe single quantum well structures grown on GaAs substrates without GaAs buffer layers. Coherent light was observed at 490-520 nm at 77 K. The minimum threshold current density was as low as 160 A/cm2 under pulsed operation.

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页码：112 / 117

页数：6

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