APPLICABILITY OF THE LOCAL-DENSITY THEORY TO INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON

被引：22

作者：

ZUNGER, A

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.28.3628

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3628 / 3631

页数：4

共 21 条

[1] LOCALIZED DESCRIPTION OF ELECTRONIC-STRUCTURE OF COVALENT SEMICONDUCTORS .1. PERFECT CRYSTALS [J].

CARTLING, BG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (19) :3171-3182

[2]

CARTLING BG, 1975, J PHYS C SOLID STATE, V8, P3183, DOI 10.1088/0022-3719/8/19/018

[3] LEVEL POSITIONS OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1982, 25 (08) :4972-4980

[4] THEORY OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1981, 23 (04) :1851-1858

[5] MANY-ELECTRON EFFECTS FOR INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1982, 25 (08) :4962-4971

[6]

DELEO GG, COMMUNICATION

[7]

HEATON RA, 1983, B AM PHYS SOC, V28, P307

[8] ELECTRONIC STATES OF A SUBSTITUTIONAL CHROMIUM IMPURITY IN GAAS [J].

HEMSTREET, LA ;

DIMMOCK, JO .

PHYSICAL REVIEW B, 1979, 20 (04) :1527-1537

[9]

LUDWIG GW, 1962, SOLID STATE PHYS, V13, P263

[10] AB-INITIO CALCULATION OF ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF DIAMOND USING DISCRETE VARIATIONAL METHOD [J].

PAINTER, GS ;

ELLIS, DE ;

LUBINSKY, AR .

PHYSICAL REVIEW B, 1971, 4 (10) :3610-&

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