THE GROWTH OF HIGH-QUALITY ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY AND ITS APPLICATION TO DOUBLE-HETEROJUNCTION LASERS

被引：9

作者：

COLLINS, DM

MARS, DE

EGLASH, SJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：170 / 173

页数：4

共 20 条

[1] CURRENT THRESHOLD UNIFORMITY OF SHALLOW PROTON STRIPE GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

BURNHAM, RD ;

SCIFRES, DR ;

STREIFER, W .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :118-119

[2] HETEROJUNCTION-INDUCED PHENOMENA IN HALL-EFFECT AND PHOTOCONDUCTIVITY MEASUREMENTS OF EPITAXIAL ALXGA1-XAS [J].

COLLINS, DM ;

MARS, DE ;

FISCHER, B ;

KOCOT, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :857-861

[3] (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS - COMPARISON OF DEVICES FABRICATED WITH DEEP AND SHALLOW PROTON-BOMBARDMENT [J].

DIXON, RW ;

JOYCE, WB .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (06) :975-985

[4] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :449-454

[5] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (12) :839-841

[6]

ENGLEMANN RWH, 1981, I PHYS C SER, V56, P309

[7] SUPPRESSION OF OUTPUT NONLINEARITIES IN DOUBLE-HETEROSTRUCTURE LASERS BY USE OF MISALIGNED MIRRORS [J].

FRESCURA, BL ;

HWANG, CJ ;

LUECHINGER, H ;

RIPPER, JE .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :770-773

[8] DOPING CHARACTERISTICS AND ELECTRICAL-PROPERTIES OF BE-DOPED P-TYPE ALXGA1-XAS BY LIQUID-PHASE EPITAXY [J].

FUJITA, S ;

BEDAIR, SM ;

LITTLEJOHN, MA ;

HAUSER, JR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5438-5444

[9] ELECTRICAL AND OPTICAL-PROPERTIES OF N-TYPE ALXGA1-XAS GROWN BY MO-VPE [J].

HALLAIS, J ;

ANDRE, JP ;

MIRCEAROUSSEL, A ;

MAHIEU, M ;

VARON, J ;

BOISSY, MC ;

VINK, AT .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (04) :665-682

[10] A LOW-BEAM-DIVERGENCE CW (GAAL)AS DOUBLE-HETEROSTRUCTURE LASER GROWN BY LOW-PRESSURE METALLORGANIC CHEMICAL VAPOR-DEPOSITION PROCESS [J].

HIRTZ, JP ;

BUIDINHVUONG ;

DUCHEMIN, JP ;

HIRTZ, P ;

CREMOUX, BD ;

BISARO, R ;

MERENDA, P ;

BONNET, M ;

DUDA, E ;

MESQUIDA, G ;

CARBALLES, JC .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :795-796

← 1 2 →