SURFACE ELECTRONIC BANDS OF GAAS(110)-SB - AN ANGULAR RESOLVED PHOTOEMISSION-STUDY

被引：37

作者：

TULKE, A

MATTERNKLOSSON, M

LUTH, H

机构：

[1] RWTH, Aachen, West Ger, RWTH, Aachen, West Ger

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 59卷 / 05期

关键词：

D O I：

10.1016/0038-1098(86)90413-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：303 / 306

页数：4

共 9 条

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[6] SB OVERLAYERS ON (110) SURFACES OF III-V-SEMICONDUCTORS - TOTAL-ENERGY MINIMIZATION AND SURFACE ELECTRONIC-STRUCTURE [J].

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PHYSICAL REVIEW B, 1985, 31 (04) :2213-2229

[7] THE SCHOTTKY-BARRIER OF GAAS(110)-SB STUDIED BY UV PHOTOEMISSION [J].

MATTERNKLOSSON, M ;

LUTH, H .

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[8]

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[9] BONDING OF ANTIMONY ON GAAS(110) - A PROTOTYPICAL SYSTEM FOR ADSORPTION OF COLUMN-V ELEMENTS ON III-V COMPOUNDS [J].

SKEATH, P ;

SU, CY ;

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SPICER, WE .

PHYSICAL REVIEW B, 1983, 27 (10) :6246-6262

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