SURFACE ELECTRONIC BANDS OF GAAS(110)-SB - AN ANGULAR RESOLVED PHOTOEMISSION-STUDY

被引:37
作者
TULKE, A
MATTERNKLOSSON, M
LUTH, H
机构
[1] RWTH, Aachen, West Ger, RWTH, Aachen, West Ger
关键词
D O I
10.1016/0038-1098(86)90413-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
8
引用
收藏
页码:303 / 306
页数:4
相关论文
共 9 条
[1]   ELECTRON-STATES OF AN SB-ORDERED OVERLAYER ON GAAS(110) [J].
BERTONI, CM ;
CALANDRA, C ;
MANGHI, F ;
MOLINARI, E .
PHYSICAL REVIEW B, 1983, 27 (02) :1251-1258
[2]   LEED-AES-TDS CHARACTERIZATION OF SB OVERLAYERS ON GAAS(110) [J].
CARELLI, J ;
KAHN, A .
SURFACE SCIENCE, 1982, 116 (02) :380-390
[3]   DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].
DUKE, CB ;
PATON, A ;
FORD, WK ;
KAHN, A ;
CARELLI, J .
PHYSICAL REVIEW B, 1982, 26 (02) :803-814
[4]   ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES [J].
HUIJSER, A ;
VANLAAR, J ;
VANROOY, TL .
PHYSICS LETTERS A, 1978, 65 (04) :337-339
[5]   SB OVERLAYERS ON (110) SURFACES OF III-V-SEMICONDUCTORS - STRUCTURE AND BONDING [J].
MAILHIOT, C ;
DUKE, CB ;
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1984, 53 (22) :2114-2116
[6]   SB OVERLAYERS ON (110) SURFACES OF III-V-SEMICONDUCTORS - TOTAL-ENERGY MINIMIZATION AND SURFACE ELECTRONIC-STRUCTURE [J].
MAILHIOT, C ;
DUKE, CB ;
CHADI, DJ .
PHYSICAL REVIEW B, 1985, 31 (04) :2213-2229
[7]   THE SCHOTTKY-BARRIER OF GAAS(110)-SB STUDIED BY UV PHOTOEMISSION [J].
MATTERNKLOSSON, M ;
LUTH, H .
SOLID STATE COMMUNICATIONS, 1985, 56 (11) :1001-1004
[8]  
MYRON JR, 1985, P INT C PHYSICS SEMI
[9]   BONDING OF ANTIMONY ON GAAS(110) - A PROTOTYPICAL SYSTEM FOR ADSORPTION OF COLUMN-V ELEMENTS ON III-V COMPOUNDS [J].
SKEATH, P ;
SU, CY ;
HARRISON, WA ;
LINDAU, I ;
SPICER, WE .
PHYSICAL REVIEW B, 1983, 27 (10) :6246-6262