ANALYSIS OF THE TRANSISTOR-RELATED NOISE IN INTEGRATED P-I-N-HBT OPTICAL RECEIVER FRONT-ENDS

被引：4

作者：

LIU, QZ ^{[1
]}

PULFREY, DL ^{[1
]}

JACKSON, MK ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1Z4,BC,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 12期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/16.249467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The equivalent-input-noise-current-spectral density for a monolithically-integrated optical receiver front-end employing InP/InGaAs heterojunction bipolar transistors and a p-i-n photodiode has been computed from a small-signal model. Particular attention has been paid to the contributions to the noise from the HBT in the first stage of the amplifier. It is shown that with transistors designed for 1-10 Gb/s receivers the base current shot noise dominates in the frequency range 10 MHz to 1 GHz, and both the base resistance thermal noise and the collector current shot noise are important at higher frequencies. Device features which determine the extent of these noise sources are identified, and ways to improve the noise performance are discussed.

引用

页码：2204 / 2210

页数：7

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