A MONOLITHIC 5-GB/S P-I-N/HBT INTEGRATED PHOTORECEIVER CIRCUIT REALIZED FROM CHEMICAL BEAM EPITAXIAL MATERIAL

被引：15

作者：

CHANDRASEKHAR, S ^{[1
]}

GNAUCK, AH ^{[1
]}

TSANG, WT ^{[1
]}

CHOA, FS ^{[1
]}

QUA, GJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.84506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic p-i-n/HBT transimpedance photoreceiver circuit has been fabricated from InP/InGaAs heterostructures grown by chemical beam epitaxy (CBE). The OEIC, incorporating HBT's with f(T) of 32 GHz and f(max) of 28 GHz, had a bandwidth of 3.8 GHz with a midband transimpedance of 400 OMEGA. The photoreceiver was operated up to 5 Gb/s, at which bit rate a sensitivity of -18.8 dBm was measured at a wavelength of 1.5-mu-m. The results demonstrate that the CBE growth technique is suitable for high performance HBT-based OEIC's.

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收藏

页码：823 / 825

页数：3

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