REFRACTIVE-INDEX OF (ALXGA1-X)(0.5)IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：50

作者：

MOSER, M

WINTERHOFF, R

GENG, C

QUEISSER, I

SCHOLZ, F

DORNEN, A

机构：

[1] 4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.111514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ordered and disordered (AlxGa1-x)(0.5)In0.5P (x=O, 0.33, 0.66) layers have been grown on GaAs by metalorganic vapor phase epitaxy. The complex refractive index below and above the band edge has been determined by transmission experiments and ellipsometry. We have observed, that ordered and disordered samples only differ near the fundamental band gap with respect to these properties.

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页码：235 / 237

页数：3

相关论文

共 19 条

[1] HIGH-RESOLUTION INTERBAND-ENERGY MEASUREMENTS FROM ELECTROREFLECTANCE SPECTRA [J].

ASPNES, DE ;

ROWE, JE .

PHYSICAL REVIEW LETTERS, 1971, 27 (04) :188-&

[2] EVIDENCE FOR SPATIALLY INDIRECT RECOMBINATION IN GA0.52IN0.48P [J].

DELONG, MC ;

OHLSEN, WD ;

VIOHL, I ;

TAYLOR, PC ;

OLSON, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2780-2787

[3] UNUSUAL PROPERTIES OF PHOTOLUMINESCENCE FROM PARTIALLY ORDERED GA0.5IN0.5P [J].

FOUQUET, JE ;

ROBBINS, VM ;

ROSNER, SJ ;

BLUM, O .

APPLIED PHYSICS LETTERS, 1990, 57 (15) :1566-1568

[4] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].

GOMYO, A ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

SUZUKI, T ;

YUASA, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373

[5]

GORNYO A, 1987, APPL PHYS LETT, V50, P673

[6] RELIABLE 1.2W CW RED-EMITTING (AL)GAINP DIODE-LASER ARRAY WITH ALGAAS CLADDING LAYERS [J].

JAECKEL, H ;

BONA, GL ;

RICHARD, H ;

ROETGEN, P ;

UNGER, P .

ELECTRONICS LETTERS, 1993, 29 (01) :101-102

[7] ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P [J].

KONDOW, M ;

KAKIBAYASHI, H ;

MINAGAWA, S .

JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) :291-296

[8]

KONDOW M, 1989, APPL PHYS LETT, V54, P1761

[9] EFFECT OF GROWTH-RATE ON THE BAND-GAP OF GA0.5IN0.5P [J].

KURTZ, SR ;

OLSON, JM ;

KIBBLER, A .

APPLIED PHYSICS LETTERS, 1990, 57 (18) :1922-1924

[10] HIGH-POWER AND HIGH-TEMPERATURE OPERATION OF GAINP/ALGAINP STRAINED MULTIPLE QUANTUM-WELL LASERS [J].

MANNOH, M ;

HOSHINA, J ;

KAMIYAMA, S ;

OHTA, H ;

BAN, Y ;

OHNAKA, K .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1173-1175