REFRACTIVE-INDEX OF (ALXGA1-X)(0.5)IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：50

作者：

MOSER, M

WINTERHOFF, R

GENG, C

QUEISSER, I

SCHOLZ, F

DORNEN, A

机构：

[1] 4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.111514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ordered and disordered (AlxGa1-x)(0.5)In0.5P (x=O, 0.33, 0.66) layers have been grown on GaAs by metalorganic vapor phase epitaxy. The complex refractive index below and above the band edge has been determined by transmission experiments and ellipsometry. We have observed, that ordered and disordered samples only differ near the fundamental band gap with respect to these properties.

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页码：235 / 237

页数：3

相关论文

共 19 条

[11] MEASUREMEMT OF THICKNESS AND REFRACTIVE INDEX OF VERY THIN FILMS AND OPTICAL PROPERTIES OF SURFACES BY ELLIPSOMETRY [J].

MCCRACKIN, FL ;

PASSAGLIA, E ;

STROMBERG, RR ;

STEINBERG, HL .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1963, A 67 (04) :363-+

[12] OPTICAL CHARACTERIZATION OF MOVPE GROWN GAINP LAYERS [J].

MOSER, M ;

GENG, C ;

LACH, E ;

QUEISSER, I ;

SCHOLZ, F ;

SCHWEIZER, H ;

DORNEN, A .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :333-338

[13] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS [J].

OHBA, Y ;

ISHIKAWA, M ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :374-379

[14] CONDUCTION BANDS IN INL-XALXP [J].

ONTON, A ;

CHICOTKA, RJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :4205-&

[15]

PIKHTIN AN, 1988, SOV PHYS SEMICOND+, V22, P613

[16] 1W CW, 672NM VISIBLE LASER-DIODES [J].

SERREZE, HB ;

HARDING, CM ;

WATERS, RG .

ELECTRONICS LETTERS, 1991, 27 (24) :2245-2246

[17] REFRACTIVE-INDEXES OF IN0.49GA0.51-XALXP LATTICE MATCHED TO GAAS [J].

TANAKA, H ;

KAWAMURA, Y ;

ASAHI, H .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :985-986

[18] LOW-THRESHOLD OPERATION OF TENSILE-STRAINED GALNP/ALGALNP MQW LDS EMITTING AT 625-NM [J].

TANAKA, T ;

YANAGISAWA, H ;

TAKIMOTO, M ;

YANO, S ;

MINAGAWA, S .

ELECTRONICS LETTERS, 1993, 29 (08) :722-724

[19] BEHAVIOR OF ELECTRONIC DIELECTRIC CONSTANT IN COVALENT AND IONIC MATERIALS [J].

WEMPLE, SH ;

DIDOMENI.M .

PHYSICAL REVIEW B, 1971, 3 (04) :1338-&