PHENOMENOLOGICAL MODEL OF GRAIN-BOUNDARY TRAPPING STATES IN POLYCRYSTALLINE SILICON UNDER OPTICAL ILLUMINATION

被引：41

作者：

POON, E ^{[1
]}

HWANG, W ^{[1
]}

机构：

[1] COLUMBIA UNIV, SCH ENGN & APPL SCI, DEPT ELECT ENGN, NEW YORK, NY 10027 USA

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1016/0038-1101(82)90197-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：699 / 705

页数：7

共 26 条

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[9] ENERGY-DISTRIBUTION OF TRAPPING STATES IN POLYCRYSTALLINE SILICON
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