PHOTOLUMINESCENCE OF GAAS FILMS GROWN BY VACUUM CHEMICAL EPITAXY

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] Bhat R., 1981, I PHYS C SER, V63, P101

[3] DEPENDENCE OF THE EXCITON-POLARITON PHOTOLUMINESCENCE LINESHAPE IN GAAS ON EPITAXIAL LAYER THICKNESS [J]. SOLID STATE COMMUNICATIONS, 1985, 54 (01) : 103 - 105

[4] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 847 - 866

[5] INCORPORATION OF AL AND GA IN ALGAAS GROWN BY LOW-PRESSURE TRIETHYL GALLIUM METALORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 609 - 611

[6] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1969, 184 (03): : 788 - &

[7] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 76 - 83

[8] EPITAXIAL-GROWTH FROM ORGANOMETALLIC SOURCES IN HIGH-VACUUM [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 22 - 29

[9] EPITAXIAL-FILMS GROWN BY VACUUM MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 490 - 496

[10] A NEW LOW-TEMPERATURE III-V MULTILAYER GROWTH TECHNIQUE - VACUUM METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6939 - 6343

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] Bhat R., 1981, I PHYS C SER, V63, P101

[3] DEPENDENCE OF THE EXCITON-POLARITON PHOTOLUMINESCENCE LINESHAPE IN GAAS ON EPITAXIAL LAYER THICKNESS [J]. SOLID STATE COMMUNICATIONS, 1985, 54 (01) : 103 - 105

[4] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 847 - 866

[5] INCORPORATION OF AL AND GA IN ALGAAS GROWN BY LOW-PRESSURE TRIETHYL GALLIUM METALORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 609 - 611

[6] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1969, 184 (03): : 788 - &

[7] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 76 - 83

[8] EPITAXIAL-GROWTH FROM ORGANOMETALLIC SOURCES IN HIGH-VACUUM [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 22 - 29

[9] EPITAXIAL-FILMS GROWN BY VACUUM MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 490 - 496

[10] A NEW LOW-TEMPERATURE III-V MULTILAYER GROWTH TECHNIQUE - VACUUM METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6939 - 6343