SEMICONDUCTOR SURFACE STRUCTURES

被引：227

作者：

Kahn, A. ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn & Comp Sci, Princeton, NJ 08544 USA

来源：

SURFACE SCIENCE REPORTS | 1983年 / 3卷 / 4-5期

关键词：

D O I：

10.1016/0167-5729(83)90006-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this article, we indicate the status of our current understanding of semiconductor surface geometries. We review the various experimental and theoretical structure determination techniques which have been developed and evaluate their performance on semiconductor surfaces. We survey the atomic geometries of non-polar and polar surfaces of compound semiconductors and specify the current state of understanding of Si surfaces. Finally we indicate the atomic geometries of semiconductor interfaces.

引用

页码：193 / 300

页数：108

共 339 条

[71] ATOMIC GEOMETRY OF GASB(110) - DETERMINATION VIA ELASTIC LOW-ENERGY ELECTRON-DIFFRACTION INTENSITY ANALYSIS
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[73] STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS
DUKE, CB
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DUKE, CB
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[75] ATOMIC GEOMETRY OF CLEAVAGE SURFACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS
DUKE, CB
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 761 - 768
[76] CALCULATIONS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM POLAR FACES OF ZNO
DUKE, CB
LUBINSKY, AR
[J]. SURFACE SCIENCE, 1975, 50 (02) : 605 - 614
[77] SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS - INSB(110) AND ITS COMPARISON WITH GAAS(110) AND ZNTE(110)
DUKE, CB
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KAHN, A
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 501 - 505
[78] ATOMIC GEOMETRY OF GAAS(110)-P(1X1)-AL
DUKE, CB
PATON, A
MEYER, RJ
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KAHN, A
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MARGARITONDO, G
KATNANI, AD
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (06) : 440 - 443
[79] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM CDTE(110)
DUKE, CB
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[J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3310 - 3317
[80] DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM INAS(110)
DUKE, CB
PATON, A
KAHN, A
BONAPACE, CR
[J]. PHYSICAL REVIEW B, 1983, 27 (10): : 6189 - 6198

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