INTRINSIC INFRARED DETECTORS

被引：138

作者：

ROGALSKI, A ^{[1
]}

PIOTROWSKI, J ^{[1
]}

机构：

[1] WARSAW ACAD TECH, INST TECH PHYS, PL-01489 WARSAW 49, POLAND

来源：

PROGRESS IN QUANTUM ELECTRONICS | 1988年 / 12卷 / 2-3期

关键词：

PHOTOCONDUCTING DEVICES - PHOTOCONDUCTING MATERIALS - SEMICONDUCTOR DEVICES; MIS;

D O I：

10.1016/0079-6727(88)90001-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent successes in applying infrared technology to remote sensing problems have been made possible by the successful development of high-performance infrared detectors over the past five decades. The infrared detectors have found military as well as civilian applications in thermal imaging, guidance, reconnaissance, surveillance, ranging and communication systems. This paper is a review of the recent rapid development of intrinsic infrared detectors and gives major emphasis to the properties of mercury cadmium telluride detectors.

引用

页码：87 / 289

页数：203

共 715 条

[51] A MODIFIED APPROACH TO ISOTHERMAL GROWTH OF ULTRAHIGH QUALITY HGCDTE FOR INFRARED APPLICATIONS [J].

BECLA, P ;

LAGOWSKI, J ;

GATOS, HC ;

RUDA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1171-1173

[52] ISOTHERMAL GROWTH OF HGCDTE UNDER CONTROLLED HG VAPOR-PRESSURE [J].

BECLA, P ;

LAGOWSKI, J ;

GATOS, HC ;

JEDRAL, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2855-2857

[53]

BECLA P, 1978, OPT APPL, V8, P21

[54] INFRARED PHOTOVOLTAIC DETECTORS UTILIZING HG1-XMNX TE AND HG1-X-YCDXMNY TE ALLOYS [J].

BECLA, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2014-2018

[55]

BEER AC, 1969, GALVANOMAGNETIC EFFE

[56] A STUDY OF PLANAR CD-DIFFUSED PB1-XSNXTE PHOTO-DIODES [J].

BEHRENDT, R ;

WENDLANDT, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (02) :373-380

[57]

BEHRENDT RK, 1978, 8TH S IMEKO TECHN CO

[58] OPEN TUBE VAPOR TRANSPORT GROWTH OF PB-1-XSN-XTE EPITAXIAL-FILMS FOR INFRARED DETECTORS [J].

BELLAVANCE, DW ;

JOHNSON, MR .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) :363-380

[59] AUGER TRANSITIONS IN NARROW-GAP SEMICONDUCTORS WITH LAX BAND-STRUCTURE [J].

BENESLAVSKII, SD ;

DMITRIEV, AV .

SOLID STATE COMMUNICATIONS, 1981, 39 (07) :811-814

[60] RECOMBINATION ANALYSIS IN 10 MU-M PB1-XSNXTE [J].

BERNDT, P ;

GENZOW, D ;

HERRMANN, KH .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (02) :497-503

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