A STUDY OF PLANAR CD-DIFFUSED PB1-XSNXTE PHOTO-DIODES

被引：3

作者：

BEHRENDT, R

WENDLANDT, R

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 61卷 / 02期

关键词：

D O I：

10.1002/pssa.2210610207

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：373 / 380

页数：8

共 17 条

[1]

AUTH J, 1977, HALBLEITERBAUELEMENT, P427

[2] SEMICONDUCTOR MONO-CRYSTALS OF (PB0.8SN0.2)TE GROWN BY TRAVELING SOLVENT METHOD [J].

BANSARAGTSCHIN, B ;

LINK, R ;

LEHMANN, G .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (03) :269-279

[3]

BEHRENDT R, UNPUBLISHED

[4] SPECTRAL RESPONSE OF PB-SNTE DETECTORS [J].

ELLIS, B .

INFRARED PHYSICS, 1977, 17 (05) :365-374

[5]

HERRMANN K, UNPUBLISHED

[6] DETECTIVITY LIMITS FOR DIFFUSED JUNCTION PBSNTE DETECTORS [J].

JOHNSON, MR ;

CHAPMAN, RA ;

WROBEL, JS .

INFRARED PHYSICS, 1975, 15 (04) :317-329

[7]

LANIR M, 1976, THESIS SYRACUSE U SY

[8] 2-COLOR DETECTOR ARRAYS BY PBTE-PBO.8SNO.2TE LIQUID-PHASE EPITAXY [J].

LOCKWOOD, AH ;

BALON, JR ;

CHIA, PS ;

RENDA, FJ .

INFRARED PHYSICS, 1976, 16 (05) :509-514

[9]

Melngailis I., 1970, SEMICOND SEMIMETALS, V5, P111, DOI [10.1016/S0080-8784(08)62815-X, DOI 10.1016/S0080-8784(08)62815-X]

[10] QUANTUM AND TEMPERATURE EFFECTS ON CAPACITANCE IN DEGENERATE P-N JUNCTIONS [J].

PELLEGRINI, B .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1175-+

← 1 2 →