OPERATIONAL WAVELENGTH RANGE OF GAINAS(P) INP INTERSECTIONAL OPTICAL SWITCHES USING FIELD-INDUCED ELECTROOPTIC EFFECT IN LOW-DIMENSIONAL QUANTUM-WELL STRUCTURES

被引：19

作者：

SHIMOMURA, K

ARAI, S

SUEMATSU, Y

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 02期

关键词：

D O I：

10.1109/3.123275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Operational wavelength range for low insertion loss and high extinction ratio of GaInAs(P)-InP intersectional optical switches consisting of low-dimensional quantum-well structures, such as quantum-box, quantum-wire, and quantum-film structures, is theoretically analyzed. As a result, it is found that superior operation characteristics can be attained with the lower dimensional quantum-well structure, for instance, operational wavelength range of around 10 nm for insertion loss less than 1 dB and extinction ratio higher than 50 dB can be obtained with the device using a quantum-box structure.

引用

页码：471 / 478

页数：8

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