BORON-DIFFUSION COEFFICIENT INCREASED BY PHOSPHORUS DIFFUSION

被引:12
作者
NAKAMURA, H [1 ]
OHYAMA, S [1 ]
TADACHI, C [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LAB,MIDORI CHO,MUSASHINO,TOKYO,JAPAN
关键词
D O I
10.1149/1.2401691
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1377 / 1381
页数:5
相关论文
共 22 条
[1]   VACANCY ENHANCED DIFFUSION IN SILICON - EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES [J].
BARUCH, P ;
SAINTESPRIT, R ;
CONSTANTINESCU, C ;
PFISTER, JC .
DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31) :76-&
[2]   EFFECTS OF HIGH PHOSPHORUS CONCENTRATION ON DIFFUSION INTO SILICON [J].
DUFFY, MC ;
BARSON, F ;
FAIRFIEL.JM ;
SCHWUTTK.GH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :84-&
[3]   LOCALIZED ENHANCED DIFFUSION IN NPN SILICON TRANSISTORS - (EMITTER DIP EFFECT VACANCY MODEL X-RAY MICROSCOPY E/T) [J].
GERETH, R ;
SCHWUTTKE, GH .
APPLIED PHYSICS LETTERS, 1966, 8 (03) :55-+
[4]   LOCALIZED ENHANCED DIFFUSION IN NPN SILICON STRUCTURES [J].
GERETH, R ;
VANLOON, PGG ;
WILLIAMS, V .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :323-+
[5]   INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J].
HU, SM ;
SCHMIDT, S .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4272-+
[6]   APPROXIMATE THEORY OF EMITTER-PUSH EFFECT [J].
HU, SM ;
YEH, TH .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4615-&
[7]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[8]   COOPERATIVE DIFFUSION EFFECT [J].
LAWRENCE, JE .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4106-+
[9]   NEW OBSERVATION OF ENHANCED DIFFUSION [J].
LEE, DB ;
WILLOUGHBY, AF .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :245-+
[10]  
MAEKAWA S, 1962, J PHYS SOC JAPAN, V17, P1952