DEPOSITION OF INPLANE ALIGNED YBA2CU3OY/Y2O3 STABILIZED ZRO2 THIN-FILMS ON BOTH SIDES OF METALLIC TAPE SUBSTRATES

被引：18

作者：

FUKUTOMI, M ^{[1
]}

AOKI, S ^{[1
]}

KOMORI, K ^{[1
]}

CHATTERJEE, R ^{[1
]}

TOGANO, K ^{[1
]}

MAEDA, H ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,HAUZ KHAS,DEPT PHYS,NEW DELHI 110016,INDIA

来源：

PHYSICA C | 1994年 / 231卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(94)90149-X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An attempt was made to deposit in-plane aligned YSZ thin buffer layers an both sides of metallic tape by modifying the bias sputtering technique. Using these substrates, it has been demonstrated that YBa2Cu3Oy films with critical current densities (J(c)) of around 10(5) A/cm(2) (77 K, 0 T) can be successfully deposited on both sides of the tape simultaneously by a laser ablation technique. A high degree of in-plane grain alignment was observed in our YBa2Cu3Oy films, which resulted in comparatively high J(c) values for the polycrystalline films. The proposed technique is pointed out as a potential method towards the fabrication of a tape conductor.

引用

页码：113 / 117

页数：5

共 12 条

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