THE EFFECTS OF THE GROWTH-PARAMETERS ON THE INITIAL-STAGE OF EPITAXIAL-GROWTH OF GAP ON SI BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：11

作者：

SOGA, T ^{[1
]}

SUZUKI, T ^{[1
]}

MORI, M ^{[1
]}

JIMBO, T ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90256-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effects of growth parameters (V/III ratio, growth pressure and substrate orientation) on the initial stage of the epitaxial growth of GaP on Si are described. It was found that a high V/III ratio is necessary to grow a smooth GaP layer on Si and that the V/III ratio where the growth mode changes from island-type to two-dimensional layer-type decreases with increasing growth pressure. A growth technique for obtaining a smooth GaP layer on Si and the nucleation mechanisms are made clear using these results.

引用

页码：134 / 140

页数：7

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