OXIDATION ENHANCED AND CONCENTRATION DEPENDENT DIFFUSIONS OF DOPANTS IN SILICON

被引：59

作者：

MATSUMOTO, S ^{[1
]}

ISHIKAWA, Y ^{[1
]}

NIIMI, T ^{[1
]}

机构：

[1] TOKAI UNIV,DEPT APPL PHYS,HIRATSUKA 259,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5049 / 5054

页数：6

共 49 条

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