DEFECT-RELATED GATE OXIDE BREAKDOWN

被引：21

作者：

BERGHOLZ, W ^{[1
]}

MOHR, W ^{[1
]}

DREWES, W ^{[1
]}

WENDT, H ^{[1
]}

机构：

[1] SIEMENS AG,CENT RES LAB,W-8000 MUNICH 83,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90271-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：359 / 366

页数：8

共 23 条

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[3]

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EPHRATH, LM ;

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[5]

FALSTER R, IN PRESS J APPL PHYS

[6]

GRAFF K, COMMUNICATION

[7]

HAHN PO, 1988, EXTENDED ABSTRACT

[8]

HASENACK C, 1988, EXTENDED ABSTRACT

[9] CATASTROPHIC BREAKDOWN IN SILICON-OXIDES - THE EFFECT OF FE IMPURITIES AT THE SIO2-SI INTERFACE [J].

HONDA, K ;

NAKANISHI, T ;

OHSAWA, A ;

TOYOKURA, N .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1960-1963

[10]

KACHIURA Y, 1989, APPL PHYS LETT, V53, P1711

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