POLARIZATION EVIDENCE FOR MOMENTUM CONSERVATION IN PHOTOELECTRIC EMISSION FROM GERMANIUM + SILICON

被引：88

作者：

GOBELI, GW

KANE, EO

ALLEN, FG

机构：

来源：

PHYSICAL REVIEW LETTERS | 1964年 / 12卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.12.94

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：94 / &

共 8 条

[1] REFLECTANCE AND PHOTOEMISSION FROM SI [J].

BRUST, D ;

PHILLIPS, JC ;

COHEN, ML .

PHYSICAL REVIEW LETTERS, 1962, 9 (09) :389-&

[2] CRITICAL POINTS AND ULTRAVIOLET REFLECTIVITY OF SEMICONDUCTORS [J].

BRUST, D ;

BASSANI, F ;

PHILLIPS, JL .

PHYSICAL REVIEW LETTERS, 1962, 9 (03) :94-&

[3] SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS [J].

GOBELI, GW ;

ALLEN, FG .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :23-&

[4] DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON [J].

GOBELI, GW ;

ALLEN, FG .

PHYSICAL REVIEW, 1962, 127 (01) :141-&

[5]

GOBELI GW, UNPUBLISHED

[6] THEORY OF PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS [J].

KANE, EO .

PHYSICAL REVIEW, 1962, 127 (01) :131-&

[7]

KANE EO, 1964, PHYS REV LETTERS, V12

[8] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

LANDER, JJ ;

GOBELL, GW ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+

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