CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FILMS FOR METALLIZATION OF INTEGRATED-CIRCUITS

被引:27
作者
PAULEAU, Y
机构
[1] CNET, Meylan, Fr, CNET, Meylan, Fr
关键词
D O I
10.1016/0040-6090(84)90051-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
53
引用
收藏
页码:243 / 258
页数:16
相关论文
共 53 条
[1]  
ALLEN SA, 1983, 1982 P MAT RES SOC A, V17, P207
[2]   LASER CHEMICAL VAPOR-DEPOSITION OF SELECTED AREA FE AND W FILMS [J].
ALLEN, SD ;
TRINGUBO, AB .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1641-1643
[3]  
BARANDON R, 1975, 5TH P INT C CHEM VAP, P390
[4]  
BEINGLASS I, 1981, 160TH M EL SOC DENV, V81, P921
[5]  
BERG RS, 1973, 4TH P INT C CVD, P196
[6]  
BOYER PK, 1983, 1982 MAT RES SOC S P, V17, P119
[7]   SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J].
BROADBENT, EK ;
RAMILLER, CL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :1427-1433
[8]  
BROADBENT EK, 1983, 163RD M EL SOC SAN F, V83, P657
[9]  
BROADBENT EK, 1983, 164TH M EL SOC WASH, V83, P433
[10]   KINETICS OF TUNGSTEN DEPOSITION BY REACTION OF WF6 AND HYDROGEN [J].
BRYANT, WA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1534-1543