AN AES INVESTIGATION INTO THE PHASE DISTRIBUTION OF ION-IMPLANTED OXYGEN IN SILICON N-CHANNEL DEVICES

被引：8

作者：

TUPPEN, CG

DAVIES, GJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 06期

关键词：

D O I：

10.1149/1.2115863

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1423 / 1427

页数：5

共 25 条

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J].

ANDERSEN, HH .

APPLIED PHYSICS, 1979, 18 (02) :131-140

[2]

ARROWSMITH RP, 1983, OCT IEEE SOS SOI TEC

[3] DIFFUSION LIMITED PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J].

BINNS, MJ ;

BROWN, WP ;

WILKES, JG ;

NEWMAN, RC ;

LIVINGSTON, FM ;

MESSOLORAS, S ;

STEWART, RJ .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :525-527

[4] COMPUTER-SIMULATION OF HIGH-DOSE REACTIVE-ION IMPLANTS INTO SILICON [J].

DOBSON, RM ;

ARROWSMITH, RP ;

HEMMENT, PLF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1331-1333

[5] THE EFFECTS OF IMPURITY DIFFUSION AND SURFACE DAMAGE ON OXYGEN PRECIPITATION IN SILICON [J].

FAIR, RB .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :388-391

[6]

FATHY D, 1983, I PHYSICS C SERIES, V67, P479

[7] CHEMICAL-SHIFTS OF AUGER LINES IN SOLIDS ON THE EXAMPLE OF THE KL23L23 TRANSITION IN SILICON AND ITS COMPOUNDS [J].

FELLENBERG, R ;

STREUBEL, P ;

MEISEL, A .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 112 (01) :55-60

[8] TEM, AES AND XPS STUDIES OF SI LAYER ON BURIED SIO2 LAYER FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION [J].

HAYASHI, T ;

MAEYAMA, S ;

YOSHII, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :1111-1116

[9]

HAYASHI T, 1981, I PHYS C SER, V59, P533

[10]

HEMMENT PLF, 1983, SEP S ION SOURC ION

← 1 2 3 →