SURFACE-LIMITED RESISTIVITY IN 2D-SEMICONDUCTORS AND 2D-METALS - INFLUENCE OF ROUGHNESS MODELING

被引：11

作者：

CALECKI, D ^{[1
]}

FISHMAN, G ^{[1
]}

机构：

[1] UNIV JOSEPH FOURIER,CNRS,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

来源：

SURFACE SCIENCE | 1990年 / 229卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90846-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Metallic and semiconducting films present a low temperature conductivity which is limited by surface roughness and is thickness dependent. We investigate how the mobility depends on the shape of the function describing the correlation of surface roughness; gaussian and exponential shapes are discussed. We point out differences at large correlation lengths. © 1990.

引用

页码：110 / 112

页数：3

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