ELECTRICAL AND OPTICAL-PROPERTIES OF GE20SB15-XBIXBI65 GLASSES

被引：13

作者：

MALEK, J ^{[1
]}

KLIKORKA, J ^{[1
]}

BENES, L ^{[1
]}

TICHY, L ^{[1
]}

TRISKA, A ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAHA, CZECHOSLOVAKIA

来源：

JOURNAL OF MATERIALS SCIENCE | 1986年 / 21卷 / 02期

关键词：

D O I：

10.1007/BF01145512

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：488 / 492

页数：5

共 11 条

[1]

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[8] PREPARATION AND CONDUCTION MECHANISM OF N-TYPE SEMICONDUCTING CHALCOGENIDE GLASSES CHEMICALLY MODIFIED BY BISMUTH [J].

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[9] PREPARATION OF N-TYPE SEMICONDUCTING GE20BI10SE70 GLASS [J].

TOHGE, N ;

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[10] ELECTRICAL TRANSPORT IN N-TYPE SEMICONDUCTING GE20BIXSE70-XTE10 GLASSES [J].

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