学术探索
学术期刊
新闻热点
数据分析
智能评审

SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF THE SI(111)5X5 SURFACE

被引：35
作者：
FEENSTRA, RM
LUTZ, MA
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期
关键词：
D O I：
10.1116/1.585539
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The scanning tunneling microscope is used to study the structural and electronic properties of the 5 x 5 reconstruction on the Si(111) surface. The 5 x 5 structure is formed by annealing 2 x 1 cleaved surfaces. Results are described for temperature-dependent imaging, voltage-dependent imaging, and spectroscopy. The structure of the 5 x 5 surface is found to be consistent with the dimer-adatom-stacking-fault model. From a comparison of neighboring regions of 2 x 1 and 5 x 5 structures, the pi-bonded chain structure for the 2 x 1 surface is also confirmed.
引用
收藏
页码：716 / 720
页数：5
相关论文
共 25 条
[11]  
HANEMAN D, 1989, SURF SCI, V224, pL965, DOI 10.1016/0039-6028(89)90891-1
[12]   THERMAL-CONVERSION OF SI(111)2X1 CLEAVED SURFACE-STRUCTURE TO SI(111)7X7 STRUCTURE [J].
HANEMAN, D ;
CHERNOV, AA .
SURFACE SCIENCE, 1989, 215 (1-2) :135-146
[13]   SURFACES OF SILICON [J].
HANEMAN, D .
REPORTS ON PROGRESS IN PHYSICS, 1987, 50 (08) :1045-1086
[14]   ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES [J].
HENZLER, M .
SURFACE SCIENCE, 1973, 36 (01) :109-122
[15]   STRUCTURE-ANALYSIS OF SI(111)2X1 WITH LOW-ENERGY ELECTRON-DIFFRACTION [J].
HIMPSEL, FJ ;
MARCUS, PM ;
TROMP, R ;
BATRA, IP ;
COOK, MR ;
JONA, F ;
LIU, H .
PHYSICAL REVIEW B, 1984, 30 (04) :2257-2259
[16]   STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].
LANDER, JJ ;
GOBELL, GW ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+
[17]   ORIGIN OF SURFACE-STATES ON SI(111)(7X7) [J].
NORTHRUP, JE .
PHYSICAL REVIEW LETTERS, 1986, 57 (01) :154-157
[18]   NEW PI-BONDED CHAIN MODEL FOR SI(111)-(2BY1) SURFACE [J].
PANDEY, KC .
PHYSICAL REVIEW LETTERS, 1981, 47 (26) :1913-1917
[19]   SI(111)-7X7 SURFACE - ENERGY-MINIMIZATION CALCULATION FOR THE DIMER ADATOM STACKING-FAULT MODEL [J].
QIAN, GX ;
CHADI, DJ .
PHYSICAL REVIEW B, 1987, 35 (03) :1288-1993
[20]   COVALENT SUPERLATTICE STRUCTURES AT SILICON (111) SURFACES [J].
ROWE, JE ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1974, 32 (23) :1315-1318
123