A LOW ENERGY ELECTRON DIFFRACTION STUDY OF PH3 ADSORPTION ON SI (111) SURFACE

被引:50
作者
VANBOMMEL, AJ
MEYER, F
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D O I
10.1016/0039-6028(67)90046-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:381 / +
页数:1
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共 15 条
[1]   EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J].
ALLEN, FG .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1510-1511
[2]  
BAUER E, 1961, PHYS REV, V213, P1206
[3]   ADSORPTION OF VARIOUS GASES ON CLEAN AND OXIDIZED GE SURFACES [J].
BOONSTRA, AH ;
VANRULER, J .
SURFACE SCIENCE, 1966, 4 (02) :141-&
[4]  
BOONSTRA AH, 1967, THESIS EINDHOVEN
[6]   PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C [J].
JONA, F ;
WENDT, HR .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3637-&
[7]   LOW ENERGY ELECTRON DIFFRACTION STUDY OF (3) DIAMOND SURFACE [J].
LANDER, JJ ;
MORRISON, J .
SURFACE SCIENCE, 1966, 4 (03) :241-&
[8]   LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&