Low-threshold native-oxide confined narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers

被引：2

作者：

Cheng, Y

Yang, GM

MacDougal, MH

Dapkus, PD

机构：

[1] National Center for Integrated Photonic Technology, Department of Electrical Engineering/Electrophysics, University of Southern California, Los Angeles

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 12期

关键词：

D O I：

10.1109/68.477259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers are demonstrated, AlAs native-oxide layers above and below waveguide region are employed for current and optical confinement to form narrow-stripe InGaAs-GaAs quantum-well lasers, A low-temperature (400 degrees C) selective wet-oxidation technique and an ion-beam-etching technique are used to fabricate insulator confined narrow-stripes and internal 45 degrees deflectors, respectively, Continuous-wave threshold currents as low as 4.5 mA and 59% surface-emitting quantum efficiencies are achieved on the devices with a 2-mu m-wide aperture and a 420-mu m-long cavity.

引用

页码：1391 / 1393

页数：3

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