LOW-THRESHOLD INGAAS/GAAS 45-DEGREES FOLDED CAVITY SURFACE-EMITTING LASER GROWN ON STRUCTURED SUBSTRATES

被引：8

作者：

FRATESCHI, NC ^{[1
]}

DAPKUS, PD ^{[1
]}

OU, SS ^{[1
]}

YANG, JJ ^{[1
]}

JANSEN, M ^{[1
]}

机构：

[1] TRW CO INC,RES CTR,SPACE & ELECTR GRP,REDONDO BEACH,CA 90278

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 07期

关键词：

D O I：

10.1109/68.229791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel folded cavity surface-emitting laser structure integrating a horizontal cavity InGaAs/GaAs laser grown on a structured substrate with a high reflectivity Bragg reflector has been fabricated. Devices with threshold currents of 8 mA and CW wall plug efficiencies at 5% at 6 mW output power have been demonstrated at a wavelength of 0.99 mum. By combining a cleaved uncoated mirror with the 45-degrees deflecting mirror we have obtained threshold current as low as 5 mA for a device 450 mum long.

引用

页码：741 / 743

页数：3

共 12 条

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[6]

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