GROWTH OF SEMICONDUCTOR-LASER STRUCTURES WITH INTEGRATED EPITAXIAL BRAGG REFLECTORS ON NONPLANAR SUBSTRATES

被引：2

作者：

FRATESCHI, NC

DAPKUS, PD

机构：

[1] National Center for Integrated Photonic Technology, Department of Electrical Engineering, University of Southern California, Los Angeles

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90459-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The issues involved in the growth of strained InGaAs/GaAs quantum well lasers integrated with AlAs/GaAs Bragg reflectors on nonplanar substrates is treated in this work. Under optimized conditions, controlled growth of uniform small area Bragg reflectors integrated with low threshold lasers has been achieved. An average pulsed threshold current of 2.9 mA/mum for edge emitting lasers at 0.98 mum with 90% external efficiency was obtained showing the potential for the use of this structures as 45-degrees folded cavity surface emitting lasers.

引用

页码：192 / 198

页数：7

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