3-TERMINAL BISTABLE LOW-THRESHOLD STRAINED INGAAS/GAAS LASER GROWN ON STRUCTURED SUBSTRATES FOR DIGITAL MODULATION

被引：4

作者：

FRATESCHI, NC

ZHAO, H

ELLIOT, J

SIALA, S

GOVINDARAJAN, M

NOTTENBURG, RN

DAPKUS, PD

机构：

[1] National Center for Integrated Photonic Technology, Department of Electrical Engineering, University of Southern California, Los Angeles, CA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 03期

关键词：

D O I：

10.1109/68.205610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained InGaAs/GaAs quantum-well three-terminal lasers with monolithically integrated intracavity modulators were fabricated using low threshold current structures formed by the temperature engineered growth (TEG) technique. An on-off switching ratio of 556 was obtained for a 30 mV change in absorber voltage. An optical power contrast ratio of 7.5 was measured with a total dc power consumption of 25.3 mW. These results show a great improvement in the digital (on-off) switching performance of three-terminal lasers with intracavity modulators.

引用

页码：275 / 278

页数：4

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