MICROSCOPIC MODEL OF HETEROEPITAXY OF GAAS ON SI(100)

被引：30

作者：

KAXIRAS, E

ALERHAND, OL

JOANNOPOULOS, JD

TURNER, GW

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

关键词：

D O I：

10.1103/PhysRevLett.62.2484

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2484 / 2486

页数：3

共 22 条

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[2] [Anonymous], ELECTRONIC STRUCTURE
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