AES STUDIES ON THIN-FILM MOSI2

[1] INVESTIGATION OF NISI AND PD3SI THIN-FILMS BY AES AND XPS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02): : 531 - 537

[2] DAVIS LE, 1977, HDB AES

[3] PHOTOEMISSION STUDIES OF D-BAND STRUCTURE IN SC, Y, GD, TI, ZR, HF, V, NB, CR AND MO [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (23) : 1697 - &

[4] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[5] GSCHNEIDNER KA, 1964, SOLID STATE PHYS, V16, P344

[6] ON THE PROBLEM OF WHETHER MASS OR CHEMICAL BONDING IS MORE IMPORTANT TO BOMBARDMENT-INDUCED COMPOSITIONAL CHANGES IN ALLOYS AND OXIDES [J]. SURFACE SCIENCE, 1980, 100 (01) : 85 - 107

[7] EXPERIMENTAL-STUDY OF MATRIX EFFECTS IN QUANTITATIVE AUGER ANALYSIS OF BINARY METAL-ALLOYS [J]. SURFACE AND INTERFACE ANALYSIS, 1981, 3 (04) : 153 - 156

[8] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 496 - 500

[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[10] APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1317 - 1324

[1] INVESTIGATION OF NISI AND PD3SI THIN-FILMS BY AES AND XPS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02): : 531 - 537

[2] DAVIS LE, 1977, HDB AES

[3] PHOTOEMISSION STUDIES OF D-BAND STRUCTURE IN SC, Y, GD, TI, ZR, HF, V, NB, CR AND MO [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (23) : 1697 - &

[4] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[5] GSCHNEIDNER KA, 1964, SOLID STATE PHYS, V16, P344

[6] ON THE PROBLEM OF WHETHER MASS OR CHEMICAL BONDING IS MORE IMPORTANT TO BOMBARDMENT-INDUCED COMPOSITIONAL CHANGES IN ALLOYS AND OXIDES [J]. SURFACE SCIENCE, 1980, 100 (01) : 85 - 107

[7] EXPERIMENTAL-STUDY OF MATRIX EFFECTS IN QUANTITATIVE AUGER ANALYSIS OF BINARY METAL-ALLOYS [J]. SURFACE AND INTERFACE ANALYSIS, 1981, 3 (04) : 153 - 156

[8] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 496 - 500

[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[10] APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1317 - 1324