RADIATION-DAMAGE AND NEAR EDGE OPTICAL-PROPERTIES OF NITROGEN IMPLANTED GALLIUM-ARSENIDE

被引：19

作者：

WESCH, W

WILK, E

HEHL, K

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 70卷 / 01期

关键词：

D O I：

10.1002/pssa.2210700129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：243 / 248

页数：6

共 16 条

[1]

ARNOLD GW, 1973, ION IMPLANTATION SEM, P49

[2]

BARANOWA EK, 1973, FIZ TEKH POLUPROV, V7, P1851

[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[4]

CHADDERTON LT, 1970, P INT C ION IMPLANTA

[5]

COATS R, 1972, P INT C DEFECTS SEMI, P96

[6]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] PRODUCTION OF RADIATION DEFECTS IN SILICON AT DIFFERENT TEMPERATURES [J].

GLASER, E ;

GOTZ, G ;

WESCH, W ;

FREY, H .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :19-24

[8]

GRUSKA B, RAD EFF

[9] CALCULATION OF OPTICAL REFLECTION AND TRANSMISSION COEFFICIENTS OF A MULTILAYER SYSTEM [J].

HEHL, K ;

WESCH, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01) :181-188

[10] MEASUREMENTS OF LAYER THICKNESSES AND REFRACTIVE-INDEXES IN HIGH-ENERGY ION-IMPLANTED GAAS AND GAP [J].

KACHARE, AH ;

SPITZER, WG ;

FREDRICKSON, JE ;

EULER, FK .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5374-5381

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