DEVELOPMENT OF A SCANNING MINORITY-CARRIER TRANSIENT SPECTROSCOPY TECHNIQUE WITH OPTICAL-INJECTION AND FULL TRANSIENT ANALYSIS

被引：16

作者：

HEISER, T

MESLI, A

COURCELLE, E

SIFFERT, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.342468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4031 / 4040

页数：10

共 33 条

[21] POINT-DEFECTS AND DISLOCATION CLIMB IN III-V COMPOUNDS SEMICONDUCTORS [J].

PETROFF, PM .

JOURNAL DE PHYSIQUE, 1979, 40 :201-205

[22]

PONPON JP, COMMUNICATION

[23]

RADER CM, 1972, DIGITAL SIGNAL PROCE

[24]

RANSOM CM, 1986, 1986 P MAT RES SOC C

[25]

Sakrison D. J., 1968, COMMUNICATION THEORY

[26] DIFFUSION OF GOLD IN DISLOCATION-FREE OR HIGHLY DISLOCATED SILICON MEASURED BY THE SPREADING-RESISTANCE TECHNIQUE [J].

STOLWIJK, NA ;

HOLZL, J ;

FRANK, W ;

WEBER, ER ;

MEHRER, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (01) :37-48

[27]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[28]

TONNEAU D, 1987, 1987 P EUR MAT RES S

[29] ANALYSIS OF TIME-DEPENDENT FLUORESCENCE EXPERIMENTS BY METHOD OF MODULATING FUNCTIONS WITH SPECIAL ATTENTION TO PULSE FLUOROMETRY [J].

VALEUR, B .

CHEMICAL PHYSICS, 1978, 30 (01) :85-93

[30] TEMPERATURE-DEPENDENCE OF THE OPTICAL-PROPERTIES OF SILICON [J].

WEAKLIEM, HA ;

REDFIELD, D .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1491-1493

← 1 2 3 4 →