FIELD FUNNELING AND RANGE STRAGGLING IN PARTIALLY DEPLETED SILICON SURFACE-BARRIER DETECTORS

被引:5
作者
ZOUTENDYK, JA
MALONE, CJ
机构
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D O I
10.1109/TNS.1984.4333463
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1101 / 1105
页数:5
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共 7 条
[1]   RISE AND PLASMA TIMES IN SEMICONDUCTOR-DETECTORS [J].
DELANEY, CFG ;
FINCH, EC .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 215 (1-2) :219-223
[2]   ANALYSIS OF CAUSES OF PULSE-HEIGHT DEFECT AND ITS MASS DEPENDENCE FOR HEAVY-ION SILICON DETECTORS [J].
FINCH, EC .
NUCLEAR INSTRUMENTS & METHODS, 1973, 113 (01) :41-49
[3]  
HSIEH CM, 1983, IEEE T ELECTRON DEV, V30, P686, DOI 10.1109/T-ED.1983.21190
[4]   PLASMA DELAY OF U-238 IONS IN SURFACE-BARRIER DETECTORS [J].
NEIDEL, HO ;
HENSCHEL, H ;
GEISSEL, H ;
LAICHTER, Y .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 212 (1-3) :299-300
[5]   CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON [J].
OLDHAM, TR ;
MCLEAN, FB .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4493-4500
[6]  
SIZE SM, 1969, PHYSICS SEMICONDUCTO, pCH8
[7]   EXPERIMENTAL-DETERMINATION OF SINGLE-EVENT UPSET (SEU) AS A FUNCTION OF COLLECTED CHARGE IN BIPOLAR INTEGRATED-CIRCUITS [J].
ZOUTENDYK, JA ;
MALONE, CJ ;
SMITH, LS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1167-1174