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RISE AND PLASMA TIMES IN SEMICONDUCTOR-DETECTORS

被引：8
作者：
DELANEY, CFG
FINCH, EC
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 215卷 / 1-2期
关键词：
D O I：
10.1016/0167-5087(83)91313-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：219 / 223
页数：5
相关论文
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[5]   CHARGE COLLECTION IN SILICON DETECTORS FOR STRONGLY IONIZING PARTICLES [J].
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[7]   PLASMA EFFECT IN SILICON SEMICONDUCTOR RADIATION DETECTORS [J].
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