EFFECT OF LOCALIZED GRAIN-BOUNDARIES IN SEMICRYSTALLINE SILICON SOLAR-CELLS

[1] Bell R. O., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P89

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[3] EFFECT OF GRAIN-BOUNDARIES IN SILICON ON MINORITY-CARRIER DIFFUSION LENGTH AND SOLAR-CELL EFFICIENCY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1009 - 1011

[4] JOHNSON SM, 1984, 17TH P IEEE PVSC KIS, P1121

[5] LEUNG D, 1984, 17TH P IEEE PHOT SPE, P264

[6] SEMICONDUCTOR PROFILING USING AN OPTICAL PROBE [J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 699 - &

[7] INTERPRETATION OF STEADY-STATE SURFACE PHOTOVOLTAGE MEASUREMENTS IN EPITAXIAL SEMICONDUCTOR LAYERS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (10) : 1097 - &

[8] THE DETERMINATION OF GRAIN-BOUNDARY RECOMBINATION RATES BY SCANNED SPOT EXCITATION METHODS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5968 - 5971

[9] EFFECT OF ILLUMINATION WAVELENGTH AND INTENSITY ON MINORITY-CARRIER DIFFUSION LENGTH OF EFG SILICON RIBBON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1770 - 1775

[10] SOPORI BL, 1979, SOL CELLS, V1, P237

[1] Bell R. O., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P89

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[3] EFFECT OF GRAIN-BOUNDARIES IN SILICON ON MINORITY-CARRIER DIFFUSION LENGTH AND SOLAR-CELL EFFICIENCY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1009 - 1011

[4] JOHNSON SM, 1984, 17TH P IEEE PVSC KIS, P1121

[5] LEUNG D, 1984, 17TH P IEEE PHOT SPE, P264

[6] SEMICONDUCTOR PROFILING USING AN OPTICAL PROBE [J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 699 - &

[7] INTERPRETATION OF STEADY-STATE SURFACE PHOTOVOLTAGE MEASUREMENTS IN EPITAXIAL SEMICONDUCTOR LAYERS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (10) : 1097 - &

[8] THE DETERMINATION OF GRAIN-BOUNDARY RECOMBINATION RATES BY SCANNED SPOT EXCITATION METHODS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5968 - 5971

[9] EFFECT OF ILLUMINATION WAVELENGTH AND INTENSITY ON MINORITY-CARRIER DIFFUSION LENGTH OF EFG SILICON RIBBON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1770 - 1775

[10] SOPORI BL, 1979, SOL CELLS, V1, P237