INVESTIGATION OF THE KINETIC MECHANISM FOR THE ION-ASSISTED ETCHING OF GAAS IN CL-2 USING A MODULATED ION-BEAM

被引：51

作者：

MCNEVIN, SC

BECKER, GE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.336241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4670 / 4678

页数：9

共 33 条

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