ACCUMULATION OF RADIATION DEFECTS IN OXYGEN-RICH N-TYPE SILICON HEAT-TREATED AT TEMPERATURES FROM 600-DEGREES-C TO 1000-DEGREES-C

被引：2

作者：

BOLOTOV, VV ^{[1
]}

KARPOV, AV ^{[1
]}

STUCHINSKY, VA ^{[1
]}

SCHMALZ, K ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST HALBLEITERPHYS,DDR-1200 FRANKFURT,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 96卷 / 01期

关键词：

D O I：

10.1002/pssa.2210960115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：129 / 134

页数：6

共 16 条

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